Originally posted by humy
But surely it must be possible to have a very small vacuum chamber with walls made of metal or even glass and have so few cracks and impurities in those walls (and cool it to below 1K if you like ) so that the number of molecules outgassing from those walls per second per meter squared would be so low that there is at least a none-zero chance that there could b ...[text shortened]... gas molecule outgassed from its walls and thus you could have a total vacuum for, say, an hour?
Nope, the vacuum at Cern is as good as we can get it, the less free flying molecules the better for the quality of the beam being shot down the middle. A molecule that collides with the beam means there is one molecule or atom of the beam that gets neutralized and therefore no longer subject to the rules of electromagnetism like the steering electrodes and acceleration elements and so forth so you want as good a vacuum in there as possible. They use all kinds of technologies to get where they are now, like titanium sublimation pumps, cryo pumps, ionizing radiation like UV and so forth and still after all is said and done the vacuum is still a thousand times worse than the surface of the moon.
Believe me, they would be as happy as a pig in poop if they could get vacuum even as good as the moon but they are far from that.
My ion implanters use the collision effect to self focus but they would not want that at Cern. My machine only accelerates ions to at most a few MEV, and mostly 0.2 MEV. For semiconductor manufacturing you don't need more than an MEV or so, it relates to how deep you want the dopant to penetrate the substrate, the higher the accel voltage the deeper the penetration. In fact the more dense the semiconductors get as time goes by, the depth of the devices goes down along with the height and width and that means lower and lower accel voltages needed, and our implanters have a voltage bucking mode (the source of the ions has to be accelerated to something around 50 KEV for efficient ion extraction) so if you want say, a 5 KEV implant (shallow depth) then you have to buck the extraction potential with the opposite polarity at 45 KEV in this case which means the acceleration voltage goes in reverse and actually slows down the velocity of the ion beam coming out of the source so you end up with your desired 5 KEV implant.